Infineon Technologies IRFB3207PBF

mpnIRFB3207PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IRFB3207
Category	Discrete Semiconductor .
Current - Continuous Dr.	170A (Tc)
Drain to Source Voltage.	75 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	260 nC @ 10 V
Input Capacitance (Ciss.	7600 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	330W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	4.5mOhm @ 75A, 10V
Series	HEXFET?
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A