Attributes

Key Value
Base Product NumberIRFB4227
CategoryDiscrete Semiconductor .
Current - Continuous Dr.65A (Tc)
DescriptionMOSFET N-CH 200V 65A TO.
Detailed DescriptionN-Channel 200 V 65A (Tc.
Digi-Key Part Number448-IRFB4227PBF-ND
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .98 nC @ 10 V
Input Capacitance (Ciss.4600 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IRFB4227PBF
Manufacturer Standard L.26 Weeks
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-40?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)330W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 46A, 10V
SeriesHEXFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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