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Infineon Technologies IRFHM8334TRPBF-INF

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C13A (Ta), 43A (Tc)
Drain to Source Voltage (Vdss)30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1180 pF @ 10 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-PowerVDFN
Part StatusActive
Power Dissipation (Max)2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
SeriesHEXFET?
Supplier Device Package8-PQFN-Dual (3.3x3.3), Power33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.35V @ 25?A