Attributes

Key Value
Base Product NumberIRFS7530
CategoryDiscrete Semiconductor .
Current - Continuous Dr.240A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .354 nC @ 10 V
Input Capacitance (Ciss.12960 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-7, D?Pak (6 Lead.
Part StatusActive
Power Dissipation (Max)375W (Tc)
Rds On (Max) @ Id, Vgs1.4mOhm @ 100A, 10V
SeriesHEXFET?, StrongIRFET?
Supplier Device PackagePG-TO263-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.7V @ 250?A
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