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Infineon Technologies IRFU4105Z
Infineon Technologieszoom
Description:
N-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C30A (Tc)
DescriptionMOSFET N-CH 55V 30A IPAK
Detailed DescriptionN-Channel 55 V 30A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
Digi-Key Part NumberIRFU4105Z-ND
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 25 V
Manufacturer Product NumberIRFU4105Z
Manufacturer, MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max)48W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs24.5mOhm @ 18A, 10V
SeriesHEXFET?
Supplier Device PackageIPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A