prev
Infineon Technologies IRFZ34NSTRR
Infineon Technologieszoom
Description:
N-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C29A (Tc)
DescriptionMOSFET N-CH 55V 29A D2PAK
Detailed DescriptionN-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Digi-Key Part NumberIRFZ34NSTRR-ND - Tape & Reel (TR)
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
Manufacturer Product NumberIRFZ34NSTRR
Manufacturer, MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs40mOhm @ 16A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A