Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .9.7 nC @ 4.5 V
Input Capacitance (Ciss.670 pF @ 10 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Part StatusObsolete
Power Dissipation (Max)47W (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 18A, 10V
SeriesHEXFET?
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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