Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.140A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .76 nC @ 4.5 V
Input Capacitance (Ciss.3720 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.5mOhm @ 71A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id1V @ 250?A
prev