Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.75A (Ta)
Drain to Source Voltage.30V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .200nC @ 10V
Input Capacitance (Ciss.5730pF @ 25V
MfrInfineon Technologies
Mounting TypeThrough Hole
PackageTube
Package / CaseTO-261-4, TO-261AA
Part StatusObsolete
Power Dissipation (Max)-
Rds On (Max) @ Id, Vgs3.3mOhm @ 140A, 10V
SeriesHEXFET?
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250?A
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