Attributes

Key Value
Base Product NumberIRLMS6702
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.4A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.7V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .8.8 nC @ 4.5 V
Input Capacitance (Ciss.210 pF @ 15 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6
Part StatusActive
Power Dissipation (Max)1.7W (Ta)
Rds On (Max) @ Id, Vgs200mOhm @ 1.6A, 4.5V
SeriesHEXFET?
Supplier Device PackageMicro6?(TSOP-6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id700mV @ 250?A
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