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Infineon Technologies IRLR8259PBF

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C57A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 13 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Part StatusDiscontinued at Digi-Key
Power Dissipation (Max)48W (Tc)
Rds On (Max) @ Id, Vgs8.7mOhm @ 21A, 10V
SeriesHEXFET?
Supplier Device PackageD-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.35V @ 25?A