prev
Infineon Technologies SPA11N60C3XKSA1

Attributes

Key Value
Base Product NumberSPA11N60
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C11A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)33W (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3-31
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 500?A