Base Product Number | SPD08P06 |
Case, Supplier Device Package | PG-TO252-3 |
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25?C | 8.83A (Ta) |
Description | MOSFET P-CH 60V 8.83A TO252-3 |
Detailed Description | P-Channel 60 V 8.83A (Ta) 42W (Tc) Surface Mount PG-TO252-3 |
Digi-Key Part Number | SPD08P06PGBTMA1TR-ND - Tape & Reel (TR) |
Drain current | -8.8A |
Drain to Source Voltage (Vdss) | 60 V, 60V |
Drain-source voltage | -60V |
Drive Voltage (Max Rds On, Min Rds On) | 6.2V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V, 13nC @ 10V |
Gate-source voltage, Vgs (Max) | ?20V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 25V, 420 pF @ 25 V |
Kind of channel | enhanced |
Manufacturer Product Number | SPD08P06PGBTMA1 |
Manufacturer Standard Lead Time | 48 Weeks |
Manufacturer, Mfr | Infineon Technologies |
Mounting | SMD |
Mounting Type | Surface Mount |
On-state resistance | 0.3? |
Operating Temperature | -55?C ~ 175?C (TJ) |
Package | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Status, Product Status | Active |
Polarisation | unipolar |
Power dissipation | 42W |
Power Dissipation (Max) | 42W (Tc) |
Rds On (Max) @ Id, Vgs | 300mOhm @ 10A, 6.2V |
Series, Technology | SIPMOS? |
Technology | MOSFET (Metal Oxide) |
Type of transistor | P-MOSFET |
Vgs(th) (Max) @ Id | 4V @ 250?A |