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Infineon Technologies SPP04N80C3XKSA1
Description:
N-Channel 800 V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3

Attributes

Key ^Value
Base Product NumberSPP04N80
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C4A (Tc)
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 100 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)63W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.5A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 240?A