| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 140 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 53 A |
| Drain Current-Max (ID) | 42 A |
| Drain-source On Resistance-Max | 16 m? |
| DS Breakdown Voltage-Min | 75 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Manufacturer | Infineon Technologies AG |
| Manufacturer Part Number | AUIRFR2307ZTRL |
| Moisture Sensitivity Level, Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | SMALL OUTLINE, R-PSSO-G2 |
| Package Shape | RECTANGULAR |