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Infineon Technologies Corporation BSM100GD120DN2
Infineon Technologies Corporationzoom
Description:
Buy BSM100GD120DN2 INFINEON , Learn more about BSM100GD120DN2 IGBT Array & Module Transistor, N Channel, 150 A, 3 V, 680 W, 1.2 kV, EconoPACK, View the manufacturer, and stock, and datasheet pdf for the BSM100GD120DN2 at Jotrin Electronics.

Attributes

Key Value
Continuous Collector Current at 25 C150 A
Factory Pack Quantity500
Gate Emitter Leakage Current400 nA
In-stock300
Maximum Gate Emitter Voltage20 V
Maximum Operating Temperature+ 150 C
Mounting StyleScrew
Package / Case, Package/CaseEconoPACK 3A
Power Dissipation680 W
Product CategoriesIGBT Modules
RoHs StatusLead free/RoHS Compliant