Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.160A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .200 nC @ 10 V
Input Capacitance (Ciss.7820 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-7, D?Pak (6 Lead.
Part StatusActive
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 140A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK (7-Lead)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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