Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .31 nC @ 5 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 7A, 4.5V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id3V @ 250?A
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