Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.29A (Ta), 166A (Tc)
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .44 nC @ 4.5 V
Input Capacitance (Ciss.3890 pF @ 13 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseDirectFET? Isometric MX
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.1mOhm @ 29A, 10V
SeriesHEXFET?
Supplier Device PackageDIRECTFET? MX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 100?A
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