Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14A (Ta), 60A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14 nC @ 4.5 V
Input Capacitance (Ciss.1430 pF @ 15 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseDirectFET? Isometric SQ
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7.3mOhm @ 14A, 10V
Series-
Supplier Device PackageDIRECTFET? SQ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 25?A
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