Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.130A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .250 nC @ 10 V
Input Capacitance (Ciss.7670 pF @ 50 V
MfrInternational Rectifier
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 75A, 10V
SeriesHEXFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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