Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.71A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .135 nC @ 10 V
Input Capacitance (Ciss.4685 pF @ 50 V
MfrInternational Rectifier
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)46W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.2mOhm @ 43A, 10V
SeriesHEXFET?
Supplier Device PackagePG-TO220 Full Pack
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1.037mA
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