Attributes

Key Value
Base Product NumberIRFR7540
CategoryDiscrete Semiconductor .
Current - Continuous Dr.90A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .130 nC @ 10 V
Input Capacitance (Ciss.4360 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)140W (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 66A, 10V
SeriesHEXFET?, StrongIRFET?
Supplier Device PackageD-PAK (TO-252AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.7V @ 100?A
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