Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)5.0
CaseTO3P
Collector Capacitance (.85 pF
Forward Current Transfe.5
Ic Max. (A)10
Icbo Max. @Vcb Max. (A)2.0m
ManufacturerInchange Semiconductor .
Max. hFE26
Max. Operating Junction.150 ?C
Max. PD (W)125
Maximum Collector Curre.10 A
Maximum Collector Power.125 W
Maximum Collector-Base .1500 V
Maximum Collector-Emitt.800 V
Maximum Emitter-Base Vo.5 V
Min hFE6
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-3
PolarityNPN
SKU116097
Surface Mounted Yes/NoNO
t(f) Max. (S)0.5u
TypeTransistor Silicon NPN
Vbr CEO800
prev