Key ^ | Value |
---|---|
Case | TO263 |
Drain current | 180A |
Drain-source voltage | 100V |
Features of semiconductor devices | thrench gate power mosfet |
Gate charge | 185nC |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | IXYS |
Mounting | SMD |
On-state resistance | 6m? |
Polarisation | unipolar |
Power dissipation | 480W |
Reverse recovery time | 66ns |
Type of transistor | N-MOSFET |