IXYS IXFA3N120-TRL

mpnIXFA3N120-TRL
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3A (Tc)
Drain to Source Voltage.	1200V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	39nC @ 10V
Input Capacitance (Ciss.	1050pF @ 25V
Mfr	IXYS
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Active
Power Dissipation (Max)	200W (Tc)
Rds On (Max) @ Id, Vgs	4.5Ohm @ 1.5A, 10V
Series	HiPerFET?
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 1.5mA