IXYS IXFK360N10T

mpnIXFK360N10T
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Base Product Number	IXFK360
Category	Discrete Semiconductor .
Current - Continuous Dr.	360A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	525 nC @ 10 V
Input Capacitance (Ciss.	33000 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-264-3, TO-264AA
Part Status	Active
Power Dissipation (Max)	1250W (Tc)
Rds On (Max) @ Id, Vgs	2.9mOhm @ 100A, 10V
Series	HiPerFET?, Trench
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 3mA