IXYS IXFN26N90

mpnIXFN26N90
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Base Product Number	IXFN26
Category	Discrete Semiconductor .
Current - Continuous Dr.	26A (Tc)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	240 nC @ 10 V
Input Capacitance (Ciss.	10800 pF @ 25 V
Mfr	IXYS
Mounting Type	Chassis Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	600W (Tc)
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	300mOhm @ 13A, 10V
Series	HiPerFET?
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 8mA