Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.375 nC @ 10 V
Drive Voltage (Max Rds .135mOhm @ 28A, 10V
FET Feature1000W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .23000 pF @ 25 V
MfrIXYS
Mounting TypeSOT-227B
Operating TemperatureChassis Mount
PackageActive
Package / Case900 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs6.5V @ 3mA
SeriesTube
Supplier Device PackageSOT-227-4, miniBLOC
Technology56A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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