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IXYS IXFX120N65X2
brand:
manufacturer:
Description:
N-Channel 650 V 120A (Tc) 1250W (Tc) Through Hole PLUS247?-3

Attributes

Key ^Value
Base Product NumberIXFX120
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C120A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15500 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3 Variant
Power Dissipation (Max)1250W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 10V
SeriesHiPerFET?, Ultra X2
Supplier Device PackagePLUS247?-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5.5V @ 8mA