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IXYS IXTA60N10T
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Description:
IXYS IXTA60N10T | Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59n

Attributes

Key ^Value
CaseTO263
Drain current60A
Drain-source voltage100V
Features of semiconductor devicesthrench gate power mosfet
Gate charge49nC
Kind of channelenhanced
Kind of packagetube
ManufacturerIXYS
MountingSMD
On-state resistance18m?
Polarisationunipolar
Power dissipation176W
Reverse recovery time59ns
Type of transistorN-MOSFET