IXYS IXTQ36N30P

mpnIXTQ36N30P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Current - Continuous Dr.	36A (Tc)
Drain to Source Voltage.	300 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	70 nC @ 10 V
Input Capacitance (Ciss.	2250 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-3P-3, SC-65-3
Part Status	Active
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	110mOhm @ 18A, 10V
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5.5V @ 250?A