IXYS IXTQ36N50P

mpnIXTQ36N50P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10V
Drain to Source Voltage.	85 nC @ 10 V
Drive Voltage (Max Rds .	170mOhm @ 500mA, 10V
FET Feature	540W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	5500 pF @ 25 V
Mfr	IXYS
Mounting Type	TO-3P
Operating Temperature	Through Hole
Package	Active
Package / Case	500 V
Part Status	N-Channel
Power Dissipation (Max)	-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs	5V @ 250?A
Series	Tube
Supplier Device Package	TO-3P-3, SC-65-3
Technology	36A (Tc)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?30V