Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.55 nC @ 10 V
Drive Voltage (Max Rds .110mOhm @ 18A, 10V
FET Feature300W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .3100 pF @ 25 V
MfrIXYS
Mounting TypeTO-3P
Operating TemperatureThrough Hole
PackageActive
Package / Case150 V
Part StatusP-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs4.5V @ 250?A
SeriesTube
Supplier Device PackageTO-3P-3, SC-65-3
Technology36A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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