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Description:
IXYS IXTT30N60P | Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500n
Attributes
| Key ^ | Value |
|---|---|
| Case | TO268 |
| Drain current | 30A |
| Drain-source voltage | 600V |
| Features of semiconductor devices | standard power mosfet |
| Gate charge | 82nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | SMD |
| On-state resistance | 240m? |
| Polarisation | unipolar |
| Power dissipation | 540W |
| Reverse recovery time | 500ns |
| Type of transistor | N-MOSFET |