IXYS IXTV26N50P

mpnIXTV26N50P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	26A (Tc)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	65 nC @ 10 V
Input Capacitance (Ciss.	3600 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3, Short Tab
Part Status	Obsolete
Power Dissipation (Max)	460W (Tc)
Rds On (Max) @ Id, Vgs	230mOhm @ 13A, 10V
Series	PolarHV?
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5.5V @ 250?A