Key ^ | Value |
---|---|
Breakdown voltage | 304.2V |
Case | P600 |
Features of semiconductor devices | glass passivated |
Kind of package | bulk |
Leakage current | 2?A |
Manufacturer | LITTELFUSE |
Max. forward impulse current | 36.2A |
Max. off-state voltage | 260V |
Mounting | THT |
Peak pulse power dissipation | 15kW |
Semiconductor structure | bidirectional |
Tolerance | ?5% |
Type of diode | TVS |