| Key ^ | Value |
|---|---|
| Breakdown voltage | 304.2V |
| Case | P600 |
| Features of semiconductor devices | glass passivated |
| Kind of package | bulk |
| Leakage current | 2?A |
| Manufacturer | LITTELFUSE |
| Max. forward impulse current | 36.2A |
| Max. off-state voltage | 260V |
| Mounting | THT |
| Peak pulse power dissipation | 15kW |
| Semiconductor structure | bidirectional |
| Tolerance | ?5% |
| Type of diode | TVS |