Key | Value |
---|---|
Breakdown voltage | 300.3V |
Case | P600 |
Features of semiconductor devices | glass passivated |
Kind of package | bulk |
Leakage current | 2?A |
Manufacturer | LITTELFUSE |
Max. forward impulse current | 49A |
Max. off-state voltage | 256V |
Mounting | THT |
Peak pulse power dissipation | 20kW |
Semiconductor structure | unidirectional |
Tolerance | ?5% |
Type of diode | TVS |