Key ^ | Value |
---|---|
Breakdown voltage | 25.7V |
Case | P600 |
Features of semiconductor devices | glass passivated |
Kind of package | bulk |
Leakage current | 2?A |
Manufacturer | LITTELFUSE |
Max. forward impulse current | 143.7A |
Max. off-state voltage | 22V |
Mounting | THT |
Peak pulse power dissipation | 5kW |
Semiconductor structure | bidirectional |
Tolerance | ?5% |
Type of diode | TVS |