| @Ic (A) | 5.0m |
| @VCE (test) (V) | 10 |
| C(ob) (F) | 10p |
| Case | TO92 |
| Collector Capacitance (Cc) | 5 pF |
| Derate (Amb) (W/?C) | 6.0m |
| Forward Current Transfer Ratio (hFE), MIN | 60 |
| hfe | 30 |
| Ic Max. (A) | 70m |
| Icbo Max. @Vcb Max. (A) | 1.0u? |
| Manufacturer | Matsushita Electronics |
| Max. Operating Junction Temperature (Tj) | 125 ?C |
| Max. PD (W) | 750m |
| Maximum Collector Current |Ic max| | 0.07 A |
| Maximum Collector Power Dissipation (Pc) | 0.6 W |
| Maximum Collector-Base Voltage |Vcb| | 300 V |
| Maximum Collector-Emitter Voltage |Vce| | 200 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 150 |
| Pinout Equivalence Number | 3-10 |
| Polarity | NPN |
| SKU | 343793 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 50M |
| Transition Frequency (ft): | 40 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO, Vbr CEO | 300 |