Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .26 nC @ 10 V
Input Capacitance (Ciss.1070 pF @ 50 V
MfrMicro Commercial Co
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseSOT-23-6
Power Dissipation (Max)1.5W
Product StatusActive
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 10V
Series-
Supplier Device PackageSOT-23-6L
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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