| Key ^ | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25?C | 220A (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| FET Feature | Silicon Carbide (SiC) |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 1000V |
| Mfr | Microchip Technology |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40?C ~ 150?C (TJ) |
| Package / Case | SP6 |
| Part Status, Series | - |
| Power - Max | 925W |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 150A, 20V |
| Supplier Device Package | SP6-P |
| Vgs(th) (Max) @ Id | 2.4V @ 30mA (Typ) |