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Microchip Technology TN0620N3-G
Description:
N-Channel 200 V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Attributes

Key ^Value
Base Product NumberTN0620
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C250mA (Tj)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
FET Feature, Series-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBag
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Max)1W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs6Ohm @ 500mA, 10V
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.6V @ 1mA