Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.300mA (Tj)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss.50 pF @ 25 V
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-2.
Part StatusActive
Power Dissipation (Max)1W (Tc)
Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V
Series-
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 1mA
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