Attributes

Key Value
Base Product NumberVP2106
CategoryDiscrete Semiconductor .
Current - Continuous Dr.250mA (Tj)
DescriptionMOSFET P-CH 60V 250MA T.
Detailed DescriptionP-Channel 60 V 250mA (T.
Digi-Key Part NumberVP2106N3-G-ND
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss.60 pF @ 25 V
ManufacturerMicrochip Technology
Manufacturer Product Nu.VP2106N3-G
Manufacturer Standard L.14 Weeks
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBag
Package / CaseTO-226-3, TO-92-3 (TO-2.
Power Dissipation (Max)1W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs12Ohm @ 500mA, 10V
Series-
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 1mA
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