Microsemi Corporation JAN2N6768T1

mpnJAN2N6768T1
brandname: Microsemi Corporation
manufacturername: Microsemi Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	14A (Tc)
Drain to Source Voltage.	400 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	110 nC @ 10 V
Mfr	Microsemi Corporation
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-254-3, TO-254AA (Str.
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	400mOhm @ 14A, 10V
Series	Military, MIL-PRF-19500.
Supplier Device Package	TO-254AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A