| Breakdown Voltage-Max | 13.5 V |
| Breakdown Voltage-Min | 12.2 V |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| ECCN Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| JEDEC-95 Code, Part Package Code | DO-214AB |
| JESD-30 Code, Package Description | R-PDSO-C2 |
| JESD-609 Code | e3 |
| Manufacturer | Microsemi Corporation |
| Manufacturer Part Number | MASMLJ11AE3 |
| Non-rep Peak Rev Power Dis-Max | 3 kW |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |
| Pbfree Code | Yes |