Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)25
CaseTO129
Derate Above 25?C200m
Forward Current Transfe.20
Ic Max. (A)2.0
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerMitsubishi
Max. hFE180
Max. Operating Junction.150 ?C
Max. PD (W)30
Maximum Collector Curre.2 A
Maximum Collector Power.30 W
Maximum Collector-Base .45 V
Maximum Collector-Emitt.40 V
Maximum Emitter-Base Vo.4 V
Min hFE10
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.N/A
PolarityNPN
SKU766474
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.1.5G
Transition Frequency (f.750 MHz
TypeTransistor Silicon NPN
Vbr CBO45
Vbr CEO45
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