| @Ic (test) (A) | 100m |
| @VCE (V), Forward Current Transfer Ratio (hFE), MIN, Min hFE | 10 |
| Case | TO128 |
| Collector Capacitance (Cc) | 40 pF |
| Derate Above 25?C | 267m |
| Ic Max. (A) | 4.0 |
| Icbo Max. @Vcb Max. (A) | 500u |
| Manufacturer | Mitsubishi |
| Max. hFE | 180 |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 40 |
| Maximum Collector Current |Ic max| | 4 A |
| Maximum Collector Power Dissipation (Pc) | 40 W |
| Maximum Collector-Base Voltage |Vcb| | 35 V |
| Maximum Collector-Emitter Voltage |Vce| | 17 V |
| Maximum Emitter-Base Voltage |Veb| | 4 V |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | N/A |
| Polarity | NPN |
| SKU | 766381 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 1.0G |
| Transition Frequency (ft): | 500 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 35 |
| Vbr CEO | 17 |