Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)10
CaseTO92
Collector Capacitance (.2.2 pF
Derate (Amb) (W/?C)2.8m
Forward Current Transfe.35
hfe35
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. Operating Junction.125 ?C
Max. PD (W)350m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.31 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-14
PolarityNPN
SKU313798
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.180M
Transition Frequency (f.80 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO30
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